Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

Author： Ardaravičius L   Kiprijanovič O   Liberis J   Šermukšnis E   Matulionis A   Ferreyra R A   Avrutin V   Özgür Ü   Morkoç H  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|10|105016-105021

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105016-105021

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