Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

Author: Hestroffer Karine   Wu Feng   Li Haoran   Lund Cory   Keller Stacia   Speck James S   Mishra Umesh K  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|10|105015-105020

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105015-105020

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