Author: Aslan B. Turan R. Liu H.C. Baribeau J.M. Buchanan M. Chow-Chong P.
Publisher: Springer Publishing Company
ISSN: 0946-2171
Source: Applied Physics B, Vol.78, Iss.2, 2004-01, pp. : 225-228
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
By Strong R. Greve D.W. Misra R. Weeks M. Pellegrini P.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Capacitance-voltage study of SiO 2 /nanocrystalline silicon/SiO 2 double-barrier structures
By Wu L. Huang X. Shi J. Dai M. Qiao F. Li W. Xu J. Chen K.
Thin Solid Films, Vol. 425, Iss. 1, 2003-02 ,pp. :
Comparison of SiGe and SiGe:C heterojunction bipolar transistors
By Knoll D. Heinemann B. Ehwald K.-E. Tillack B. Schley P. Osten H.J.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :