Investigation of W-Ge-N deposited on Ge as a diffusion barrier for Cu metallization

Author： Rawal S.   Norton D.P.   Anderson T.J.   McElwee-White L.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.85, Iss.3, 2006-11, pp. : 325-329

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Research on HfSiN Diffusion Barrier Thin Film for Micro-Nanoscale ULSI-Cu Metallization

By  

Materials Science Forum, Vol. 2014, Iss. 809, 2015-02 ,pp. : 583-588

Trans Tech Publications

Access to resources Recommend Favorite

Evaluation of tantalum silicide sputtering target materials for amorphous Ta-Si-N diffusion barrier for Cu metallization

By Ivanov E.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 325-328

Elsevier

Access to resources Recommend Favorite

Sputter-deposited Mo and reactively sputter-deposited Mo-N films as barrier layers against Cu diffusion

By Chuang J.-C.   Tu S.-L.   Chen M.-C.  

Thin Solid Films, Vol. 346, Iss. 1, 1999-06 ,pp. : 299-306

Elsevier

Access to resources Recommend Favorite

Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealing

By Yin K.-M.   Chang L.   Chen F.-R.   Kai J.-J.   Chiang C.-C.   Chuang G.   Ding P.   Chin B.   Zhang H.   Chen F.  

Thin Solid Films, Vol. 388, Iss. 1, 2001-06 ,pp. : 27-33

Elsevier

Access to resources Recommend Favorite

A new method for deposition of cubic Ta diffusion barrier for Cu metallization

By Yuan Z.L.   Zhang D.H.   Li C.Y.   Prasad K.   Tan C.M.   Tang L.J.  

Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 126-129

Elsevier

Access to resources Recommend Favorite