Electronic and structural properties of zincblende AlxGa1-xN

Author： Liou B.-T.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.86, Iss.4, 2007-03, pp. : 539-543

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Growth and characterization of AlxGa1−xN lateral polarity structures

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1039-1042

John Wiley & Sons Inc

Access to resources Recommend Favorite

Structural and optical properties of MBE‐grown asymmetric cubic GaN/AlxGa1–xN double quantum wells

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 873-878

John Wiley & Sons Inc

Access to resources Recommend Favorite

On the behavior of silicon donor in conductive AlxGa1–xN (0.63 ≤ x ≤ 1)

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 6, 2015-06 ,pp. : 1306-1310

John Wiley & Sons Inc

Access to resources Recommend Favorite

Minority carrier diffusion length in AlxGa1‐xN (x = 0.1) grown by ammonia molecular beam epitaxy

By  

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 4‐5, 2015-04 ,pp. : 447-450

John Wiley & Sons Inc

Access to resources Recommend Favorite

The effects of Al on the neutral Mg acceptor impurity in AlxGa1‐xN

By  

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 4‐5, 2015-04 ,pp. : 357-360

John Wiley & Sons Inc

Access to resources Recommend Favorite