Related content

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

By Xue Shoubin   Zhang Xing   Huang Ru   Zhuang Huizhao  

Applied Physics A, Vol. 94, Iss. 2, 2009-02 ,pp. : 287-291

Springer Publishing Company

Access to resources Recommend Favorite

Fabrication and characterization of MOS devices on 3C-SiC films grown by reactive magnetron sputtering on Si(111) substrates

By Wahab Q.   Turan R.   Hultman L.   Willander M.   Sundgren J.-E.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 252-257

Elsevier

Access to resources Recommend Favorite

Self‐organized growth of catalyst‐free GaN nano‐ and micro‐rods on Si(111) substrates by MOCVD

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 1132-1137

John Wiley & Sons Inc

Access to resources Recommend Favorite

Structural characterization and optoelectronic properties of GaN thin films on Si(111) substrates using pulsed laser deposition assisted by gas discharge

By Tong X.L.   Zheng Q.G.   Hu S.L.   Qin Y.X.   Ding Z.H.  

Applied Physics A, Vol. 79, Iss. 8, 2004-12 ,pp. : 1959-1963

Springer Publishing Company

Access to resources Recommend Favorite

GaN films deposited by planar magnetron sputtering

By Kikuma T.   Tominaga K.   Furutani K.   Kusaka K.   Hanabusa T.   Mukai T.  

Vacuum, Vol. 66, Iss. 3, 2002-08 ,pp. : 233-237

Elsevier

Access to resources Recommend Favorite