Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides

Author： WełnaM KudrawiecR NabetaniY TanakaT JaquezM DubonO D YuK M WalukiewiczW

E-ISSN： 1361-6641|30|8|85018-85023

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.8, 2015-08, pp. : 85018-85023

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