Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere

Author： Lee Jae-Gil   Kim Hyun-Seop   Lee Jung-Yeon   Seo Kwang-Seok   Cha Ho-Young  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|11|115008-115013

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.11, 2015-11, pp. : 115008-115013

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