Enhanced characteristics in gate-recessed and sidewall-recessed AlGaAs/InGaAs PHEMTs by citric-based selective wet etching

Author: Yarn K. F.  

Publisher: Taylor & Francis Ltd

ISSN: 1362-3060

Source: International Journal of Electronics, Vol.93, Iss.2, 2006-02, pp. : 67-80

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content