Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|793-796
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 793-796
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Capacitances in 4H-SiC TSI-VJFETs
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :