Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|444-447
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 444-447
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Abstract
The analysis of Ti/Ni metal-layer as Ohmic and Schottky contacts to 4H n-SiC (with a doping concentration of ~1E18 cm-3) is reported. Both Ti (10nm/Ni (100nm) contact and Ti (20nm)/Ni (100nm) contact were found to have Ohmic behavior with comparable specific contact resistance (~4.3 to 5.3×10-4 Ωcm2) after annealing at 1100 °C. Ti (10nm)/Ni (100nm) contact annealed at 500 °C and 600 °C was also demonstrated as Schottky contact to 4H n-SiC layers.
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