Distribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiC

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2015|821|407-410

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 407-410

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract