Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2014|806|57-60
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2014, Iss.806, 2015-01, pp. : 57-60
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Fluorescent P-Type 4H-SiC Grown by PVT Method
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Optical Characterization of p-Type 4H-SiC Epilayers
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :