Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2015|821|331-334
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 331-334
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :