Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 371-375

Trans Tech Publications

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Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM

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Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 285-288

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Dislocation Characterization in 4H-SiC Crystals

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 393-396

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Transmission electron microscope study of a threading dislocation with b = [0001] + <11̅00> and its effect on leakage in a 4H–SiC MOSFET

By Onda Shoichi   Watanabe Hiroki   Kito Yasuo   Kondo Hiroyuki   Uehigashi Hideyuki   Hosokawa Norikazu   Hisada Yoshiyuki   Shiraishi Kenji   Saka Hiroyasu  

Philosophical Magazine Letters, Vol. 93, Iss. 8, 2013-08 ,pp. : 439-447

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