Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|129-132
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 129-132
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :