![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2015|821|929-932
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 929-932
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :