AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective

E-ISSN： 1759-0795|2|1|95-104

ISSN： 1759-0787

Source： International Journal of Microwave and Wireless Technologies, Vol.2, Iss.1, 2010-02, pp. : 95-104

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

GaN-based amplifiers for wideband applications

International Journal of Microwave and Wireless Technologies, Vol. 2, Iss. 1, 2010-02 ,pp. : 135-141

Cambridge University Press

Access to resources Recommend Favorite

InAlN/GaN HEMTs based L-band high-power packaged amplifiers

International Journal of Microwave and Wireless Technologies, Vol. 6, Iss. 6, 2014-12 ,pp. : 565-572

Cambridge University Press

Access to resources Recommend Favorite

Evaluation of GaN-HEMT power amplifiers using BST-based components for load modulation

International Journal of Microwave and Wireless Technologies, Vol. 6, Iss. 3-4, 2014-06 ,pp. : 253-263

Cambridge University Press

Access to resources Recommend Favorite

A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

International Journal of Microwave and Wireless Technologies, Vol. 4, Iss. 3, 2012-06 ,pp. : 267-274

Cambridge University Press

Access to resources Recommend Favorite

AlGaN/GaN epitaxy and technology

International Journal of Microwave and Wireless Technologies, Vol. 2, Iss. 1, 2010-02 ,pp. : 3-11

Cambridge University Press

Access to resources Recommend Favorite