Author： Qu Shenqi Wang Xiaoliang Xiao Hongling Wang Cuimei Jiang Lijuan Feng Chun Chen Hong Yin Haibo Peng Enchao Kang He Wang Zhanguo Hou Xun
Publisher： Edp Sciences
E-ISSN： 1286-0050|66|2|20101-20101
ISSN： 1286-0042
Source： EPJ Applied Physics (The), Vol.66, Iss.2, 2014-06, pp. : 20101-20101
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
By Qu Shenqi Wang Xiaoliang Xiao Hongling Wang Cuimei Jiang Lijuan Feng Chun Chen Hong Yin Haibo Yan Junda Peng Enchao Kang He Wang Zhanguo Hou Xun
EPJ Applied Physics (The), Vol. 68, Iss. 1, 2014-10 ,pp. :
By Agboton Alain Defrance Nicolas Altuntas Philippe Lecourt François Douvry Yannick Hoel Virginie Soltani Ali De Jaeger Jean-Claude
EPJ Applied Physics (The), Vol. 64, Iss. 2, 2013-11 ,pp. :
By Aubry R. Jacquet J.-C. Dessertenne B. Chartier E. Adam D. Cordier Y. Semond F. Massies J. DiForte-Poisson M.-A. Romann A. Delage S. L.
EPJ Applied Physics (The), Vol. 22, Iss. 2, 2003-05 ,pp. :