AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta2O5 dielectric

Author： Lee K.H.   Chang P.C.   Chang S.J.   Yin Y.C.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|57|3|30102-30102

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.57, Iss.3, 2012-03, pp. : 30102-30102

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