Low-voltage organic complementary inverters fabricated with pentacene/SrTiO₃ and C₆₀/SrTiO₃ field-effect transistors

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EPJ Applied Physics (The), Vol. 61, Iss. 3, 2013-02 ,pp. : 30201-30201

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Low temperature characteristics of AlGaN/GaN high electron mobility transistors

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EPJ Applied Physics (The), Vol. 56, Iss. 1, 2011-09 ,pp. : 10101-10101

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Organic field-effect transistors with a sandwich structure from inserting 2,2′,2″-(1,3,5-benzenetriyl)tris[1-phenyl-1H-benzimidazole] in the pentacene active layer

By Yu Xinge   Yu Junsheng   Zhou Jianlin   Huang Wei   Lin Hui  

EPJ Applied Physics (The), Vol. 62, Iss. 2, 2013-04 ,pp. : 20101-20101

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Extracting parameters from the current-voltage characteristics of polycrystalline octithiophene thin film field-effect transistors

By Bourguiga R.   Mahdouani M.   Mansouri S.   Horowitz G.  

EPJ Applied Physics (The), Vol. 39, Iss. 1, 2007-06 ,pp. : 7-16

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The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors

By Lin D.F.   Wang X.L.   Xiao H.L.   Wang C.M.   Jiang L.J.   Feng C.   Chen H.   Hou Q.F.   Deng Q.W.   Bi Y.   Kang H.  

EPJ Applied Physics (The), Vol. 55, Iss. 3, 2011-08 ,pp. : 30104-30104

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