Charge transport limited by grain boundaries in polycrystalline octithiophene thin film transistors

By Bourguiga R.   Horowitz G.   Garnier F.   Hajlaoui R.   Jemai S.   Bouchriha H.  

EPJ Applied Physics (The), Vol. 19, Iss. 2, 2002-07 ,pp. : 117-122

Edp Sciences

Access to resources Recommend Favorite

Analytic model for organic thin film transistors (OTFTs): effect of contact resistances application to the octithiophene

By Mansouri S.   Mahdouani M.   Oudir A.   Zorai S.   Ben Dkhil S.   Horowitz G.   Bourguiga R.  

EPJ Applied Physics (The), Vol. 48, Iss. 3, 2009-10 ,pp. : 30401-30401

Edp Sciences

Access to resources Recommend Favorite

Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures

By Kassmi K.   Maimouni R.   Sarrabayrouse G.  

EPJ Applied Physics (The), Vol. 8, Iss. 2, 2010-03 ,pp. : 171-178

Edp Sciences

Access to resources Recommend Favorite

Modeling of current-voltage characteristics of metal/ultra-thin oxide/semiconductor structures

By Khlifi Y.   Kassmi K.   Roubi L.   Maimouni R.  

EPJ Applied Physics (The), Vol. 9, Iss. 3, 2010-03 ,pp. : 239-246

Edp Sciences

Access to resources Recommend Favorite

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance–voltage characteristics

By Wei Xixiong   Deng Wanling   Fang Jielin   Ma Xiaoyu   Huang Junkai  

EPJ Applied Physics (The), Vol. 80, Iss. 1, 2017-10 ,pp. : 10103-10103

Edp Sciences

Access to resources Recommend Favorite