Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

Author: Gassoumi M.   Saadaoui S.   Ben Salem M.M.   Gaquiere C.   Maaref H.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|55|3|30101-30101

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.55, Iss.3, 2011-08, pp. : 30101-30101

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