Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates

Author： Ilgaz A. Gökden S. Tülek R. Teke A. Özçelik S. Özbay E.

E-ISSN： 1286-0050|55|3|30102-30102

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.55, Iss.3, 2011-08, pp. : 30102-30102

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

By Aubry R. Jacquet J.-C. Dessertenne B. Chartier E. Adam D. Cordier Y. Semond F. Massies J. DiForte-Poisson M.-A. Romann A. Delage S. L.

EPJ Applied Physics (The), Vol. 22, Iss. 2, 2003-05 ,pp. : 77-82

Edp Sciences

Access to resources Recommend Favorite

Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry

By Losurdo M. Giangregorio M. M. Capezzuto P. Bruno G. Kim T.-H. Choi S. Brown A.

EPJ Applied Physics (The), Vol. 31, Iss. 3, 2005-09 ,pp. : 159-164

Edp Sciences

Access to resources Recommend Favorite

Comparative Study About the Structural Properties of ZnO Films Grown on Si, GaAs, And Al2O3 Substrates and a GaN Template

MATEC Web of conference, Vol. 78, Iss. issue, 2016-10 ,pp. : 01107-01107

Edp Sciences

Access to resources Recommend Favorite

AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature

By Zhang Lu Wang Xiaoliang Xiao Hongling Chen Hong Feng Chun Shen Guangdi Wang Zhanguo Hou Xun

EPJ Applied Physics (The), Vol. 62, Iss. 2, 2013-05 ,pp. : 20105-20105

Edp Sciences

Access to resources Recommend Favorite

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

By Fathallah O. Gassoumi M. Grimbert B. Gaquière C. Maaref H.

EPJ Applied Physics (The), Vol. 51, Iss. 1, 2010-06 ,pp. : 10304-10304

Edp Sciences

Access to resources Recommend Favorite