Kinetic Processes in the CVD of SiC from CH3SiCl3-H2 in a Vertical Hot-Wall Reactor

Publisher： Edp Sciences

E-ISSN： 1764-7177|05|C5|C5-105-C5-112

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.05, Iss.C5, 1995-06, pp. : C5-105-C5-112

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

ON THE KINETICS OF THE CVD OF Si FROM SiH2Cl2/H2 AND SiC FROM CH3SiCl3/H2 IN A VERTICAL TUBULAR HOT-WALL REACTOR

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C5, 1989-05 ,pp. : C5-93-C5-103

Edp Sciences

Access to resources Recommend Favorite

Kinetic laws of the chemical process in the CVD of SiC ceramics from CH3SiCl3-H2 precursor

By  

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-527-C3-533

Edp Sciences

Access to resources Recommend Favorite

Deposition kinetics of Al2O3 from AlCl3-CO2-H2-HCl gas mixtures by thermal CVD in a hot-wall reactor

By  

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-85-Pr8-91

Edp Sciences

Access to resources Recommend Favorite

LPCVD of SiC layers in a hot-wall reactor using TMS precursor

By  

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-329-C3-336

Edp Sciences

Access to resources Recommend Favorite

LPCVD of Al2O3 layers using a hot-wall reactor

By  

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-589-C3-596

Edp Sciences

Access to resources Recommend Favorite