Publisher： Edp Sciences
E-ISSN： 1764-7177|02|C2|C2-413-C2-420
ISSN： 1155-4339
Source： Le Journal de Physique IV, Vol.02, Iss.C2, 1991-09, pp. : C2-413-C2-420
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :
Access to resources
Recommend
Remote plasma chemical vapour deposition of silicon nitride films
Journal de Physique III, Vol. 2, Iss. 8, 1992-08 ,pp. :
LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :
Access to resources
FAST PLASMA DEPOSITION OF CARBON AND SILICON LAYERS
Le Journal de Physique Colloques, Vol. 51, Iss. C5, 1990-09 ,pp. :