EVALUATING THE INFLUENCE OF GROWTH PARAMETERS ON CVD DIAMONDDEPOSITION USING FACTORIAL ANALYSIS

E-ISSN： 1764-7177|02|C2|C2-915-C2-921

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.02, Iss.C2, 1991-09, pp. : C2-915-C2-921

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Supported Catalytic Growth of SWCNTs using the CVD Method

Journal of Physics: Conference Series , Vol. 26, Iss. 1, 2006-02 ,pp. : 139-142

IOP Publishing

Access to resources Recommend Favorite

Influence of process pressure on β-SiC growth by CVD

Journal of Physics: Conference Series , Vol. 541, Iss. 1, 2014-10 ,pp. : 72-76

IOP Publishing

Access to resources Recommend Favorite

Influence of buffer layers on Ni thin film structure and graphene growth by CVD

By Ozceri Elif Selamet Yusuf

Journal of Physics D: Applied Physics, Vol. 48, Iss. 45, 2015-11 ,pp. : 455302-455311

IOP Publishing

Access to resources Recommend Favorite

Diamond films: Initial CVD growth stage using nanodiamonds as nucleation centers

By Vul’ A. Golubev V. Grudinkin S. Krüger A. Naramoto H.

Technical Physics Letters, Vol. 28, Iss. 9, 2002-09 ,pp. : 787-789

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Silicon atomic layer growth using flash heating in CVD

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-449-C3-456

Edp Sciences

Access to resources Recommend Favorite