Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers

Publisher： Edp Sciences

E-ISSN： 1764-7177|05|C5|C5-887-C5-893

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.05, Iss.C5, 1995-06, pp. : C5-887-C5-893

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES

By  

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-817-C2-822

Edp Sciences

Access to resources Recommend Favorite

Comparison of physical and electrical properties of ULPCVD and VLPCVD in situ phosphorus doped polysilicon or undoped polysilicon

By  

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-411-C3-417

Edp Sciences

Access to resources Recommend Favorite

UHV CHEMICAL VAPOUR DEPOSITION OF UNDOPED AND IN-SITU DOPED POLYSILICON FILMS

By  

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-809-C2-816

Edp Sciences

Access to resources Recommend Favorite

Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization

By  

Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. : C3-123-C3-130

Edp Sciences

Access to resources Recommend Favorite

ELECTRICAL PROPERTIES AND MICROSTRUCTURE OF INTERNAL INTERFACES IN Al DOPED POLYSILICON

By  

Le Journal de Physique Colloques, Vol. 46, Iss. C4, 1985-04 ,pp. : C4-405-C4-410

Edp Sciences

Access to resources Recommend Favorite