Temperature Dependent Model for Hole Effective Mass in Heavily Doped p-type SiGe

Publisher： Edp Sciences

E-ISSN： 1764-7177|06|C3|C3-137-C3-142

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.06, Iss.C3, 1996-04, pp. : C3-137-C3-142

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

PHOTOLUMINESCENCE IN HEAVILY DOPED Si AND Ge

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. : C5-61-C5-64

Edp Sciences

Access to resources Recommend Favorite

Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

By Kruck P.   Weichselbaum A.   Helm M.   Fromherz T.   Bauer G.   Nutzel J.F.   Abstreiter G.  

Superlattices and Microstructures, Vol. 23, Iss. 1, 1998-01 ,pp. : 61-66

Academic Press

Access to resources Recommend Favorite

PHONON SOFTENING IN ULTRA HEAVILY DOPED Si AND Ge

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. : C5-197-C5-201

Edp Sciences

Access to resources Recommend Favorite

Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wells

By Fromherz T.   Kruck P.   Helm M.   Bauer G.   Nutzel J.F.   Abstreiter G.  

Superlattices and Microstructures, Vol. 20, Iss. 2, 1995-02 ,pp. : 237-243

Academic Press

Access to resources Recommend Favorite

Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

By  

Journal of Physics: Conference Series , Vol. 167, Iss. 1, 2009-05 ,pp. : 134-138

IOP Publishing

Access to resources Recommend Favorite