Determination of the impurity doping profile of a transistor from measurements of certain electrical characteristics.

Publisher: Edp Sciences

E-ISSN: 1160-8161|22|S2|59-63

ISSN: 1160-8161

Source: Journal de Physique Appliqué, Vol.22, Iss.S2, 1961-02, pp. : 59-63

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