Related content

INFLUENCE OF MBE GROWTH CONDITIONS ON THE PROPERTIES OF AlxGa1-xAs/GaAs HETEROSTRUCTURES

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-209-C5-220

Edp Sciences

Access to resources Recommend Favorite

The influence of growth patterns on the transmission properties of nonabrupt GaAs/Al x Ga 1- x As heterojunctions

By Filho J.R.   Farias G.A.   Freire V.N.  

Superlattices and Microstructures, Vol. 20, Iss. 2, 1995-02 ,pp. : 155-161

Academic Press

Access to resources Recommend Favorite

Mobility enhancement in MBE-grown In x Ga 1- x As/In 0.52 Al 0.48 As modulation-doped heterostructures

By Yoon S.F.   Miao Y.B.   Radhakrishnan K.   Duan H.L.  

Superlattices and Microstructures, Vol. 19, Iss. 3, 1995-03 ,pp. : 159-167

Academic Press

Access to resources Recommend Favorite

Drift velocity of electrons in quantum wells of selectively doped In 0.5 Ga 0.5 As/Al x In 1 − x As and In 0.2 Ga 0.8 As/Al x Ga 1 − x As heterostructures in high electric fields

By Požela J.   Požela K.   Raguotis R.   Jucienė V.  

Semiconductors, Vol. 45, Iss. 6, 2011-06 ,pp. : 761-765

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

INFLUENCE OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE GROWN GaAs

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-135-C5-143

Edp Sciences

Access to resources Recommend Favorite