SILICON MODULATION DOPING STRUCTURES USING MULTI-STEP MOLECULAR BEAM EPITAXY AND ION IMPLANTATION

Publisher： Edp Sciences

E-ISSN： 0449-1947|43|C5|C5-173-C5-173

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.43, Iss.C5, 1982-12, pp. : C5-173-C5-173

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