Publisher: Edp Sciences
E-ISSN: 0449-1947|44|C10|C10-247-C10-251
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.44, Iss.C10, 1983-12, pp. : C10-247-C10-251
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4
Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. :
Layer-by-layer growth of silicon nitride films by NH
Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. :