STRUCTURAL AND ELECTRICAL EFFECTS OF DOPANT SEGREGATION TO SILICON GRAIN BOUNDARIES

Publisher： Edp Sciences

E-ISSN： 0449-1947|46|C4|C4-411-C4-416

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.46, Iss.C4, 1985-04, pp. : C4-411-C4-416

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 631-636

Edp Sciences

Access to resources Recommend Favorite

On the origin of the electrical activity in silicon grain boundaries

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 613-621

Edp Sciences

Access to resources Recommend Favorite

DIFFUSION AND EQUILIBRIUM SEGREGATION IN GRAIN BOUNDARIES : EFFECTS OF LARGE SEGREGATION

By  

Le Journal de Physique Colloques, Vol. 46, Iss. C4, 1985-04 ,pp. : C4-483-C4-490

Edp Sciences

Access to resources Recommend Favorite

STRUCTURAL EFFECTS ON GRAIN BOUNDARY SEGREGATION, HARDENING AND FRACTURE

By  

Le Journal de Physique Colloques, Vol. 46, Iss. C4, 1985-04 ,pp. : C4-555-C4-566

Edp Sciences

Access to resources Recommend Favorite

ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON GROWN WITH AN ALUMINIUM CONTENT GRADIENT

By  

Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. : C1-439-C1-444

Edp Sciences

Access to resources Recommend Favorite