EPITAXIAL SILICON GROWTH IN A REDUCED PRESSURE AND TEMPERATURE CVD REACTOR

Publisher: Edp Sciences

E-ISSN: 0449-1947|50|C5|C5-519-C5-527

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.50, Iss.C5, 1989-05, pp. : C5-519-C5-527

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