SILICON MOLECULAR BEAM EPITAXY : STATUS ; DEVICES ; TRENDS

Publisher： Edp Sciences

E-ISSN： 0449-1947|49|C4|C4-347-C4-355

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-347-C4-355

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Background doping of films in molecular beam epitaxy of silicon

By Kanter B.   Nikiforov A.   Pchelyakov O.  

Technical Physics Letters, Vol. 24, Iss. 2, 1998-02 ,pp. : 91-93

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Growing nanocrystalline silicon on sapphire by molecular beam epitaxy

By Pavlov D.   Shilyaev P.   Korotkov E.   Krivulin N.  

Technical Physics Letters, Vol. 36, Iss. 6, 2010-06 ,pp. : 548-550

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-153-C5-172

Edp Sciences

Access to resources Recommend Favorite

Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy

By Svetlov S.   Chalkov V.   Shengurov V.   Uskova E.   Maksimov G.   Andreev B.   Krasil’nik Z.   Stepikhova M.   Ellmer H.  

Technical Physics Letters, Vol. 26, Iss. 1, 2000-01 ,pp. : 41-43

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Terrace sizes in molecular beam epitaxy

By  

Journal de Physique I, Vol. 2, Iss. 11, 1992-11 ,pp. : 2107-2121

Edp Sciences

Access to resources Recommend Favorite