A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

By Vexler M.   Tyaginov S.   Illarionov Yu.   Sing Yew   Shenp Ang   Fedorov V.   Isakov D.  

Semiconductors, Vol. 47, Iss. 5, 2013-05 ,pp. : 686-694

MAIK Nauka/Interperiodica

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Current and capacitance characteristics of a metal–insulator–semiconductor structure with an ultrathin oxide layer

By Fu Y.   Willander M.   Lundgren P.  

Superlattices and Microstructures, Vol. 30, Iss. 2, 2001-08 ,pp. : 53-60

Academic Press

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New semiconductor devices based on a special metal-insulator-semiconductor structure for measuring the energy (dose) of electromagnetic and nuclear radiation

By Kasherininov P.   Lodygin A.  

Technical Physics Letters, Vol. 23, Iss. 2, 1997-02 ,pp. : 137-139

MAIK Nauka/Interperiodica

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Hydrogen sensors based on metal-insulator-semiconductor structures with a layer of a proton-conducting solid electrolyte

By Vasiliev A.   Filippov V.   Dobrovolsky Yu.   Pisareva A.   Moritz W.   Palombari R.  

Russian Journal of Electrochemistry, Vol. 43, Iss. 5, 2007-05 ,pp. : 561-569

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Efficiency and reliability of metal-insulator-semiconductor radiative structures based on broad-band semiconductors with unipolar conductivity

By Sidorov V.   Drizhuk A.   Sidorov D.  

Technical Physics Letters, Vol. 23, Iss. 11, 1997-11 ,pp. : 825-827

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