Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

Author： Masumoto Keiko Asamizu Hirokuni Tamura Kentaro Kudou Chiaki Nishio Johji Kojima Kazutoshi Ohno Toshiyuki Okumura Hajime

Publisher： MDPI

E-ISSN： 1996-1944|7|10|7010-7021

ISSN： 1996-1944

Source： Materials, Vol.7, Iss.10, 2014-10, pp. : 7010-7021

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

By Johansson Leif I. Xia Chao Hassan Jawad Ul Iakimov Tihomir Zakharov Alexei A. Watcharinyanon Somsakul Yakimova Rositza Janzén Erik Virojanadara Chariya

Crystals, Vol. 3, Iss. 1, 2013-01 ,pp. : 1-13

MDPI

Access to resources Recommend Favorite

Theoretical study on the structures, isomerization and stability of SiC 3 H isomers

By Sun Hao

Theoretical Chemistry Accounts, Vol. 119, Iss. 5-6, 2008-04 ,pp. : 501-509

Springer Publishing Company

Access to resources Recommend Favorite

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

By Hu Jichao Jia Renxu Xin Bin Peng Bo Wang Yuehu Zhang Yuming

Materials, Vol. 9, Iss. 9, 2016-08 ,pp. : 743-743

MDPI

Access to resources Recommend Favorite

Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy

By Yoshikawa Masanobu Seki Hirohumi Inoue Keiko Matsuda Keiko Tanahashi Yusaku Sako Hideki Nanen Yuihiro Kato Muneharu Kimoto Tsunenobu

Applied Spectroscopy, Vol. 65, Iss. 5, 2011-05 ,pp. : 543-548

Society for Applied Spectroscopy

Access to resources Recommend Favorite