Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack

Author: Chen Yung-Yu  

Publisher: MDPI

E-ISSN: 1996-1944|7|3|2370-2381

ISSN: 1996-1944

Source: Materials, Vol.7, Iss.3, 2014-03, pp. : 2370-2381

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Abstract