Laser Assisted SiC Wafering Using COLD SPLIT

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|403-406

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 403-406

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 441-444

Trans Tech Publications

Access to resources Recommend Favorite

Characterization of crystalline SiC films grown by pulsed laser deposition

By Pelt J.S.   Ramsey M.E.   Durbin S.M.  

Thin Solid Films, Vol. 371, Iss. 1, 2000-08 ,pp. : 72-79

Elsevier

Access to resources Recommend Favorite

Pulsed laser ablation of SiC in a nitrogen atmosphere: formation of CN

By Trusso S.   Barletta E.   Barreca F.   Neri F.  

Applied Physics A, Vol. 79, Iss. 8, 2004-12 ,pp. : 1997-2005

Springer Publishing Company

Access to resources Recommend Favorite

High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 524-527

Trans Tech Publications

Access to resources Recommend Favorite

Laser surface alloying of medium carbon steel with SiC (P)

By Thawari G.   Sundarararjan G.   Joshi S.V.  

Thin Solid Films, Vol. 423, Iss. 1, 2003-01 ,pp. : 41-53

Elsevier

Access to resources Recommend Favorite