Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2017|897|399-402
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 399-402
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Effect of Annealing on the Characteristics of Ti/Al Ohmic Contacts to p-Type 4H-SiC
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :