Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2017|897|579-582
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 579-582
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Effects of Neutron and Electron Irradiation on 4H-SiC Diodes
Materials Science Forum, Vol. 2016, Iss. 840, 2016-02 ,pp. :
Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :