Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 571-574

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Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 834-837

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High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 55-58

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Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 818-821

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Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 851-854

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