Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2017|897|571-574

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 571-574

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Abstract