Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2017|897|411-414
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 411-414
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :