An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2017|897|411-414

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 411-414

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract