Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|151-154
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 151-154
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :