Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|72-75
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 72-75
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Hot Filament CVD Growth of 4H-SiC Epitaxial Layers
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Optimization of 150 mm 4H SiC Substrate Crystal Quality
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :