99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2018|924|72-75

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 72-75

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract