A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|649-652

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 649-652

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

On the Optimum Determination and Use of SiC VJFET Threshold Voltage

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 657-660

Trans Tech Publications

Access to resources Recommend Favorite

Dynamic Transformation of Austenite at Temperatures above the Ae3

By  

Materials Science Forum, Vol. 2018, Iss. 941, 2019-01 ,pp. : 633-638

Trans Tech Publications

Access to resources Recommend Favorite

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 285-288

Trans Tech Publications

Access to resources Recommend Favorite

Oxygen Reduction Effect on T’-Pr2-xCexCuO4 Nanopowders in the Underdoped Regime Studied by X-Ray Absorption near Edge Structure

By  

Materials Science Forum, Vol. 2018, Iss. 936, 2018-11 ,pp. : 93-97

Trans Tech Publications

Access to resources Recommend Favorite

Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO2

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 498-501

Trans Tech Publications

Access to resources Recommend Favorite