On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

By Lin Po-Jung   Tien Ching-Ho   Wang Tzu-Yu   Chen Che-Lin   Ou Sin-Liang   Chung Bu-Chin   Wuu Dong-Sing  

Crystals, Vol. 7, Iss. 5, 2017-05 ,pp. : 134-134

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The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

By Wang Dongbo   Liu Gang   Jiao Shujie   Kong Lingping   Liu Teren   Liu Tong   Wang Jinzhong   Guo Fengyun   Luan Chunyang   Li Zhenghao  

Crystals, Vol. 7, Iss. 3, 2017-03 ,pp. : 69-69

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Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

By Kucharski Robert   Janicki Łukasz   Zajac Marcin   Welna Monika   Motyka Marcin   Skierbiszewski Czesław   Kudrawiec Robert  

Crystals, Vol. 7, Iss. 7, 2017-06 ,pp. : 187-187

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Effects of Al and N₂ Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE

By Kishimoto Katsuhiro   Funato Mitsuru   Kawakami Yoichi  

Crystals, Vol. 7, Iss. 5, 2017-04 ,pp. : 123-123

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Hydrothermal Crystal Growth of Piezoelectric α-Quartz Phase of AO₂ (A = Ge, Si) and MXO₄ (X = Al, Ga, Fe and X = P, As): A Historical Overview

By Cambon Olivier   Haines Julien  

Crystals, Vol. 7, Iss. 2, 2017-02 ,pp. : 38-38

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