Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer

By Song Jie   Han Jung  

Materials, Vol. 10, Iss. 3, 2017-03 ,pp. : 252-252

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Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

By Mostafa Ahmad   Medraj Mamoun  

Materials, Vol. 10, Iss. 6, 2017-06 ,pp. : 676-676

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Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

By Martins Jorge   Bahubalindruni Pydi   Rovisco Ana   Kiazadeh Asal   Martins Rodrigo   Fortunato Elvira   Barquinha Pedro  

Materials, Vol. 10, Iss. 6, 2017-06 ,pp. : 680-680

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Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

By Ho Wen-Jeng   Lin Jian-Cheng   Liu Jheng-Jie   Bai Wen-Bin   Shiao Hung-Pin  

Materials, Vol. 10, Iss. 7, 2017-06 ,pp. : 700-700

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Comparative Study on ZnO Monolayer Doped with Al, Ga and In Atoms as Transparent Electrodes

By Sun Dan   Tan Changlong   Tian Xiaohua   Huang Yuewu  

Materials, Vol. 10, Iss. 7, 2017-06 ,pp. : 703-703

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